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| 2SC4742 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature * High breakdown voltage VCES = 1500 V * Built-in damper diode type Outline TO-3P 2 1. Base 2. Collector (Flange) 3. Emitter 1 ID 1 2 3 3 2SC4742 Absolute Maximum Ratings (Ta = 25C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25C. Symbol VCES VEBO IC IC(peak) IC(surge) PC* Tj Tstg ID 1 Ratings 1500 6 6 7 16 50 150 -55 to +150 7 Unit V V A A A W C C A Electrical Characteristics (Ta = 25C) Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Fall time Symbol V(BR)EBO ICES hFE VCE(sat) VBE(sat) VECF tf Min 6 -- -- -- -- -- -- Typ -- -- -- -- -- -- -- Max -- 500 25 2.0 1.5 2.0 0.4 V V V s Unit V A Test conditions IE = 400 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 5 A, IB = 1.25 A IC = 5 A, IB = 1.25 A IF = 6 A ICP = 5 A, IB1 = 1 A, IB2 = -2 A 2 |
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